usb260 document number 84705 14-dec-05 vishay general semiconductor www.vishay.com 1 do-214aa (smb) new product surface mount ultrafast plastic rectifier major ratings and characteristics i f(av) 2.0 a v rrm 600 v i fsm 90 a t rr 30 ns v f 1.0 v t j max. 150 c features ? glass passivated chip junction ? ideal for automated placement ? ultrafast recovery times for high efficiency ? low forward voltage, low power losses ? high forward surge capability ? meets msl level 1, per j-std-020c ? solder dip 260 c, 40 seconds ? component in accordance to rohs 2002/95/ec and wee 2002/96/ec typical applications for use in high frequency rectification and free- wheeling application in sw itching mode converters and inverters for consumer, computer, automotive and telecommunication. mechanical data case: do-214aa (smb) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: color band denotes cathode end maximum ratings (t a = 25 c unless otherwise specified) parameters symbol usb260 unit device marking code u60 maximum repetitive peak reverse voltage v rrm 600 v maximum rms voltage v rms 420 v maximum dc blocking voltage v dc 600 v maximum average forward rectified current (see fig. 1) i f(av) 2.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 90 a non-repetitive avalanche energy at i as = 2.0 a, l = 10 mh, t j = 25 c e as 20 mj operating junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com 2 document number 84705 14-dec-05 usb260 vishay general semiconductor electrical characteristics (t a = 25 c unless otherwise specified) notes: (1) pulse test: 300 s pulse width, 1 % duty cycle thermal characteristics (t a = 25 c unless otherwise specified) notes: (1) units mounted on p.c.b. with 2.0 x 2.0" copper pad areas ordering information ratings and characteristics curves (t a = 25 c unless otherwise noted) parameters test condition symbol ty p. max. unit breakdown voltage at i r = 10 a t j = 25 c v (br) 600 (minimum) v instantaneous forward voltage (1) at i f = 1 a t j = 25 c v f 1.25 - v at i f = 2.0 a t j = 25 c t j = 125 c 1.5 1.0 1.6 1.1 maximum reverse current (1) at v r = 600 v t j = 25 c t j = 125 c i r - 30 5.0 100 a maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 30 ns typical junction capacitance at 4.0 v, 1 mhz c j 45 pf parameters symbol usb260 unit typical thermal resistance (1) r ja r jl 45 10 c/w preferred p/n unit weight (g) preferred package code base quantity delivery mode usb260-e3/52t 0.093 52t 750 7" diameter plastic tape & reel usb260-e3/5bt 0.093 5bt 3200 13" diameter plastic tape & reel figure 1. maximum forward current derating curve 0 8 0 90 100 110 120 130 140 150 3.0 2.0 1.0 p.c.b. mo u nted on 2.0 x 2.0" copper pad areas a v erage for w ard r ectified c u rren t (a) lead temperat u re (c) figure 2. forward power loss characteristics t d - tp/t tp 0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 2.2 2.4 2.6 3.0 2.5 2.0 1.5 1.0 0.5 0 a v erage for w ard c u rrent (a) a v erage po w er loss ( w ) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0. 8 d = 1.0
usb260 document number 84705 14-dec-05 vishay general semiconductor www.vishay.com 3 figure 3. maximum non-repetitive peak forward surge current figure 4. typical instantaneous forward characteristics figure 5. typical revers e leakage characteristics 1 10 100 nu m b er of cycles at 60 hz 60 40 20 0 8 0 100 peak for w ard s u rge c u rrent (a) t j = 150 c t j = 125 c t j = 25 c 100 10 1 0.1 0.01 0.1 0.6 1.1 1.6 2.1 2.6 3.1 3.6 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t j = 150 c t j = 125 c t j = 25 c 1000 100 10 10 20 30 40 50 60 70 8 0 90 100 1 0.1 0 percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent ( a) figure 6. typical junction capacitance figure 7. typical trans ient thermal impedance 1000 100 10 1 0.1 1 10 100 re v erse v oltage ( v ) j u nction capacitance (pf) 1 10 100 transient thermal impedance (c/ w ) t, p u lse d u ration (s) 0.01 0.1 1 10 100
www.vishay.com 4 document number 84705 14-dec-05 usb260 vishay general semiconductor package outline dime nsions in inches (millimeters) 0.160 (4.06) 0.1 8 0 (4.57) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.205 (5.21) 0.220 (5.59) 0 (0) 0.00 8 (0.2) 0.130 (3.30) 0.155 (3.94) 0.0 8 4 (2.13) 0.096 (2.44) 0.077 (1.95) 0.0 8 6 (2.20) cathode band do-214aa (smb) 0.0 8 5 max. (2.159 max.) 0.220 ref 0.0 8 6 mi n . (2.1 8 mi n .) 0.060 mi n . (1.52 mi n .) mountin g pad layout
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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